.png)
PRODUCTS
Solutions for Spectroscopy, TCSPC & Imaging
ID Qube NIR Free-Running / Gated
.png)
InGaAs/InP single-photon avalanche diodes (III-V SPADs)
900-1700 nm
- 컴팩트하고 경제적인 모듈
- High-efficiency single-photon detection (up to 35%)
- Optimised for free-running operation
- Precise timing (<200 ps jitter, typ. <150 ps)
- Ultra-low noise (<800 Hz dark counts)
- Fast gating (up to 100 MHz and free-running)
Specification
| ID Qube NIR | ||||
| Wavelength range | 900 nm to 1700 nm | |||
| Deadtime range | 100 ns to 80 μs, in 100 ns steps | |||
| Output pulse format | LVTTL or NIM | |||
| Output pulse width | 10 ns | |||
| Optical coupling | Free space or optical fibre (MMF62.5) | |||
| Efficiency range (1) calibrated at λ = 1550 nm | 10%, 15%, 20%, 25% | |||
| Extended efficiency range (2) | 30%, 35% | |||
| Timing jitter at 25% efficiency level | Maximum 200 ps (<150 ps typical) | |||
| Max. dark count rate @ efficiency (3) | 10% | 15% | 20% | 25% |
| STD model (Max. dark counts per second) | 1.2 kHz | 3 kHz | 6 kHz | 10 kHz |
| LN model (Max. dark count per second) | 0.8 kHz | 1.5 kHz | 3 kHz | 6 kHz |
| Gate-in max frequency | 100 MHz (Gated model) / 1 MHz (Free-running model) | |||
| Gate-in min pulse duration | 3 ns (Gated model) / 500 ns (Free-running model) | |||
| Gate-in voltage range | -2 V to 3 V | |||
| Gate-in coupling | 50 Ω DC | |||
| Gate-in threshold voltage range | -2 V to 2 V, in 1 mV steps | |||
| Output connector | SMA | |||
| Operating temperature | +10°C to +35°C, max. 60% humidity | |||
| Dimensions (W x H x L) | 95 mm x 95 mm x 95 mm | |||
| Weight | 1 kg | |||
| Cooling time @ power-on | < 3 minutes | |||
| Power supply | 100-240 VAC; 1.4 A; 50-60 Hz | |||
| Storage temperature | +5°C to +50°C, max. 60% humidity | |||
Application
- Quantum optics and computing
- Single-photon source characterisation
- Fluorescence lifetime measurements
- Failure analysis of integrated circuits
- VIS, NIR and MIR spectroscopy
제품정보
